Samsung unveils groundbreaking storage chip with over 400 layers
Alongside the zHBM concept, Samsung Electronics unveiled its V10 BV-NAND storage chip at the Future of Memory and Storage (FMS) 2026 expo today. It uses the company’s 10th-generation vertical NAND flash memory architecture and represents a major technical upgrade over previous-generation NAND flash chips. V10 BV-NAND uses a new wafer-bonding technology, making Samsung the first […]
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